***  EECS290Y 0.6um CMOS Level28 Model ***

*** the range which is valid in this model file:
***	L: 0.6um <-> 0.8um
***	W: 5um <-> 20um

*** NMOS device name:   nnmos, fnmos, snmos
*** PMOS device name:   npmos, fpmos, spmos

*** EECS240 0.6um Level28 NMOS MODEL ***
*** prefix n=nmos p=pmos ***
*** suffix n=nominal f=fast s=slow ***
.param
+ ntoxn=0.015 ntoxf=0.014 ntoxs=0.016 
+ ndxln=0 ndxlf=-1e-7 ndxls=1e-7 
+ ndxwn=0 ndxwf=1e-7 ndxws=-1e-7
+ ndelvton=0 ndelvtof=-0.1 ndelvtos=0.1
+ ncgon=1.2e-10 ncgof=1.1e-10 ncgos=1.3e-10
+ ncjn=5.5E-4 ncjf=5.0E-4 ncjs=6.5E-4
+ ncjswn=2.6E-10 ncjswf=2.2E-10 ncjsws=3.0E-10
+ nrshn=35 nrshf=30 nrshs=40

*** nominal NNMOS ***
.model nnmos nmos LEVEL=28    

*** geometry parameters ***
+LD=3.5e-08 WD=1.5e-08
+XL='7e-08+ndxln' XW=ndxwn

*** gate overlap capacitance parameters ***
+CGDO=ncgon CGSO=ncgon

*** gate capacitance parameters ***
+TOXM=ntoxn

*** diffusion parasitic parameters ***
+ACM=2
+HDIF=1.5e-6 LDIF=2e-7
+RSH=nrshn RS=2e3 RD=2e3
+CJ=ncjn MJ=0.2  
+CJSW=ncjswn MJSW=0.1   
+PB=0.6 PHP=0.5
+FC=0.45

*** threshold voltage parameters ***
+DELVTO=ndelvton
+VFB0=-0.72 LVFB=0.05 WVFB=-0.8 PVFB=0.5
+PHI0=0.8
+K1=1.06 LK1=-0.25 WK1=-0.56 PK1=0.58
+K2=0.003 LK2=0.035
+ETA0=-0.055 LETA=0.045 WETA=0.2 PETA=-0.2
+X2E=-0.003 LX2E=0.0001 WX2E=0.025 PX2E=-0.02

*** mobility parameters ***
+VDDM=5.5
+U00=0.04 LU0=0.14 WU0=-0.3 PU0=-0.15
+X2U0=-0.038 LX2U0=0.013 WX2U0=0.12 PX2U0=-0.07
+MUZ=500 LMUZ=80 WMUZ=-450 PMUZ=140
+X2M=-30 LX2M=20 WX2M=100 PX2M=-60
+X3MS=260 LX3MS=-170 WX3MS=-1100 PX3MS=900
+X33M=3300 LX33M=-2000 WX33M=-15000 PX33M=12000
+U1=-0.005 LU1=0.09 WU1=-0.6 PU1=0.6
+B1=0.24 LB1=0.04 WB1=-0.3 PB1=0.24
+B2=0.2 LB2=0.14 WB2=0.22 PB2=-0.18
+X3U1=0.03 LX3U1=0.03

*** weak inversion parameters ***
+N0=1.2
+NB0=0.02
+ND0=0.02
+WFAC=10
+WFACU=0.02

*** noise parameters ***
+KF=3e-24


*** fast FNMOS *** 
.model fnmos nmos LEVEL=28    

*** geometry parameters ***
+LD=3.5e-08 WD=1.5e-08
+XL='7e-08+ndxlf' XW=ndxwf

*** gate overlap capacitance parameters ***
+CGDO=ncgof CGSO=ncgof

*** gate capacitance parameters ***
+TOXM=ntoxf

*** diffusion parasitic parameters ***
+ACM=2
+HDIF=1.5e-6 LDIF=2e-7
+RSH=nrshf RS=2e3 RD=2e3
+CJ=ncjf MJ=0.2  
+CJSW=ncjswf MJSW=0.1   
+PB=0.6 PHP=0.5
+FC=0.45

*** threshold voltage parameters ***
+DELVTO=ndelvtof
+VFB0=-0.72 LVFB=0.05 WVFB=-0.8 PVFB=0.5
+PHI0=0.8
+K1=1.06 LK1=-0.25 WK1=-0.56 PK1=0.58
+K2=0.003 LK2=0.035
+ETA0=-0.055 LETA=0.045 WETA=0.2 PETA=-0.2
+X2E=-0.003 LX2E=0.0001 WX2E=0.025 PX2E=-0.02

*** mobility parameters ***
+VDDM=5.5
+U00=0.04 LU0=0.14 WU0=-0.3 PU0=-0.15
+X2U0=-0.038 LX2U0=0.013 WX2U0=0.12 PX2U0=-0.07
+MUZ=500 LMUZ=80 WMUZ=-450 PMUZ=140
+X2M=-30 LX2M=20 WX2M=100 PX2M=-60
+X3MS=260 LX3MS=-170 WX3MS=-1100 PX3MS=900
+X33M=3300 LX33M=-2000 WX33M=-15000 PX33M=12000
+U1=-0.005 LU1=0.09 WU1=-0.6 PU1=0.6
+B1=0.24 LB1=0.04 WB1=-0.3 PB1=0.24
+B2=0.2 LB2=0.14 WB2=0.22 PB2=-0.18
+X3U1=0.03 LX3U1=0.03

*** weak inversion parameters ***
+N0=1.2
+NB0=0.02
+ND0=0.02
+WFAC=10
+WFACU=0.02

*** noise parameters ***
+KF=3e-24


*** slow SNMOS *** 
.model snmos nmos LEVEL=28    

*** geometry parameters ***
+LD=3.5e-08 WD=1.5e-08
+XL='7e-08+ndxls' XW=ndxws

*** gate overlap capacitance parameters ***
+CGDO=ncgos CGSO=ncgos

*** gate capacitance parameters ***
+TOXM=ntoxs

*** diffusion parasitic parameters ***
+ACM=2
+HDIF=1.5e-6 LDIF=2e-7
+RSH=nrshs RS=2e3 RD=2e3
+CJ=ncjs MJ=0.2  
+CJSW=ncjsws MJSW=0.1   
+PB=0.6 PHP=0.5
+FC=0.45

*** threshold voltage parameters ***
+DELVTO=ndelvtos
+VFB0=-0.72 LVFB=0.05 WVFB=-0.8 PVFB=0.5
+PHI0=0.8
+K1=1.06 LK1=-0.25 WK1=-0.56 PK1=0.58
+K2=0.003 LK2=0.035
+ETA0=-0.055 LETA=0.045 WETA=0.2 PETA=-0.2
+X2E=-0.003 LX2E=0.0001 WX2E=0.025 PX2E=-0.02

*** mobility parameters ***
+VDDM=5.5
+U00=0.04 LU0=0.14 WU0=-0.3 PU0=-0.15
+X2U0=-0.038 LX2U0=0.013 WX2U0=0.12 PX2U0=-0.07
+MUZ=500 LMUZ=80 WMUZ=-450 PMUZ=140
+X2M=-30 LX2M=20 WX2M=100 PX2M=-60
+X3MS=260 LX3MS=-170 WX3MS=-1100 PX3MS=900
+X33M=3300 LX33M=-2000 WX33M=-15000 PX33M=12000
+U1=-0.005 LU1=0.09 WU1=-0.6 PU1=0.6
+B1=0.24 LB1=0.04 WB1=-0.3 PB1=0.24
+B2=0.2 LB2=0.14 WB2=0.22 PB2=-0.18
+X3U1=0.03 LX3U1=0.03

*** weak inversion parameters ***
+N0=1.2
+NB0=0.02
+ND0=0.02
+WFAC=10
+WFACU=0.02

*** noise parameters ***
+KF=3e-24


*** EECS240 0.6um Level28 PMOS MODEL ***
*** prefix n=nmos p=pmos ***
*** suffix n=nominal f=fast s=slow ***
.param
+ ptoxn=0.015 ptoxf=0.014 ptoxs=0.016
+ pdxln=0 pdxlf=-1e-7 pdxls=1e-7
+ pdxwn=0 pdxwf=1e-7 pdxws=-1e-7
+ pdelvton=0 pdelvtof=0.1 pdelvtos=-0.1
+ pcgon=1.2e-10 pcgof=1.1e-10 pcgos=1.3e-10
+ pcjn=6.5E-4 pcjf=6.0E-4 pcjs=7.0E-4
+ pcjswn=4.5E-10 pcjswf=4.0E-10 pcjsws=5.0E-10
+ prshn=60 prshf=50 prshs=70

*** nominal NPMOS ***
.model npmos pmos LEVEL=28
  
*** geometry parameters ***
+LD=1.2e-8 WD=4.4e-08
+XL='7e-08+pdxln' XW=pdxwn

*** gate overlap capacitance parameters ***
+CGDO=pcgon CGSO=pcgon  

*** gate capacitance parameters ***
+TOXM=ptoxn

*** diffusion parasitic parameters ***
+ACM=2
+HDIF=1.5e-6 LDIF=2e-07
+RSH=prshn RS=5e3 RD=5e3
+CJ=pcjn MJ=0.47
+CJSW=pcjswn MJSW=0.16 
+PB=0.8 PHP=0.75 
+FC=0.45

*** threshold voltage parameters ***
+DELVTO=pdelvton
+VFB0=-0.36 LVFB=0.09 WVFB=0.36 PVFB=-0.23
+PHI0=0.71
+K1=0.63 LK1=-0.17 WK1=-0.15 PK1=0.22
+K2=0.012
+ETA0=-0.046 LETA=0.044 WETA=0.1 PETA=-0.1
+X2E=-0.0035 LX2E=0.0007

*** mobility parameters ***
+VDDM=5.5
+U00=0.059 LU0=0.095 WU0=0.57 PU0=-0.6
+X2U0=-0.025 LX2U0=0.02 WX2U0=0.11 PX2U0=-0.1
+MUZ=134 LMUZ=45 WMUZ=282 PMUZ=-276
+X2M=-2.5 LX2M=7.4 WX2M=40 PX2M=-37
+X3MS=25.7 LX3MS=0.04 WX3MS=-137 PX3MS=87
+X33M=40.6 LX33M=2.4 WX33M=-270 PX33M=87
+U1=-0.07 LU1=0.134 WU1=-0.21 PU1=0.23
+B1=0.4 LB1=0.04 WB1=-0.3 PB1=0.3
+B2=0.003 LB2=0.42 WB2=2.3 PB2=-2.0

*** weak inversion parameters ***
+N0=1.0 LN0=0.23
+NB0=0.045 LNB=-0.013
+WFAC=17 LWFAC=-5.3
+WFACU=0 LWFACU=0.26

*** noise parameters ***
+KF=1.5e-24

*** fast FPMOS ***
.model fpmos pmos LEVEL=28 
  
*** geometry parameters ***
+LD=1.2e-8 WD=4.4e-08
+XL='7e-08+pdxlf' XW=pdxwf

*** gate overlap capacitance parameters ***
+CGDO=pcgof CGSO=pcgof  

*** gate capacitance parameters ***
+TOXM=ptoxf

*** diffusion parasitic parameters ***
+ACM=2
+HDIF=1.5e-6 LDIF=2e-07
+RSH=prshf RS=5e3 RD=5e3
+CJ=pcjf MJ=0.47
+CJSW=pcjswf MJSW=0.16 
+PB=0.8 PHP=0.75 
+FC=0.45

*** threshold voltage parameters ***
+DELVTO=pdelvtof
+VFB0=-0.36 LVFB=0.09 WVFB=0.36 PVFB=-0.23
+PHI0=0.71
+K1=0.63 LK1=-0.17 WK1=-0.15 PK1=0.22
+K2=0.012
+ETA0=-0.046 LETA=0.044 WETA=0.1 PETA=-0.1
+X2E=-0.0035 LX2E=0.0007

*** mobility parameters ***
+VDDM=5.5
+U00=0.059 LU0=0.095 WU0=0.57 PU0=-0.6
+X2U0=-0.025 LX2U0=0.02 WX2U0=0.11 PX2U0=-0.1
+MUZ=134 LMUZ=45 WMUZ=282 PMUZ=-276
+X2M=-2.5 LX2M=7.4 WX2M=40 PX2M=-37
+X3MS=25.7 LX3MS=0.04 WX3MS=-137 PX3MS=87
+X33M=40.6 LX33M=2.4 WX33M=-270 PX33M=87
+U1=-0.07 LU1=0.134 WU1=-0.21 PU1=0.23
+B1=0.4 LB1=0.04 WB1=-0.3 PB1=0.3
+B2=0.003 LB2=0.42 WB2=2.3 PB2=-2.0

*** weak inversion parameters ***
+N0=1.0 LN0=0.23
+NB0=0.045 LNB=-0.013
+WFAC=17 LWFAC=-5.3
+WFACU=0 LWFACU=0.26

*** noise parameters ***
+KF=1.5e-24

*** slow SPMOS ***
.model spmos pmos LEVEL=28 
  
*** geometry parameters ***
+LD=1.2e-8 WD=4.4e-08
+XL='7e-08+pdxls' XW=pdxws

*** gate overlap capacitance parameters ***
+CGDO=pcgos CGSO=pcgos  

*** gate capacitance parameters ***
+TOXM=ptoxs

*** diffusion parasitic parameters ***
+ACM=2
+HDIF=1.5e-6 LDIF=2e-07
+RSH=prshs RS=5e3 RD=5e3
+CJ=pcjs MJ=0.47
+CJSW=pcjsws MJSW=0.16 
+PB=0.8 PHP=0.75 
+FC=0.45

*** threshold voltage parameters ***
+DELVTO=pdelvtos
+VFB0=-0.36 LVFB=0.09 WVFB=0.36 PVFB=-0.23
+PHI0=0.71
+K1=0.63 LK1=-0.17 WK1=-0.15 PK1=0.22
+K2=0.012
+ETA0=-0.046 LETA=0.044 WETA=0.1 PETA=-0.1
+X2E=-0.0035 LX2E=0.0007

*** mobility parameters ***
+VDDM=5.5
+U00=0.059 LU0=0.095 WU0=0.57 PU0=-0.6
+X2U0=-0.025 LX2U0=0.02 WX2U0=0.11 PX2U0=-0.1
+MUZ=134 LMUZ=45 WMUZ=282 PMUZ=-276
+X2M=-2.5 LX2M=7.4 WX2M=40 PX2M=-37
+X3MS=25.7 LX3MS=0.04 WX3MS=-137 PX3MS=87
+X33M=40.6 LX33M=2.4 WX33M=-270 PX33M=87
+U1=-0.07 LU1=0.134 WU1=-0.21 PU1=0.23
+B1=0.4 LB1=0.04 WB1=-0.3 PB1=0.3
+B2=0.003 LB2=0.42 WB2=2.3 PB2=-2.0

*** weak inversion parameters ***
+N0=1.0 LN0=0.23
+NB0=0.045 LNB=-0.013
+WFAC=17 LWFAC=-5.3
+WFACU=0 LWFACU=0.26

*** noise parameters ***
+KF=1.5e-24